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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFIC1817/D
The MRFIC Line
1800 MHz GaAs Integrated Power Amplifier
Designed specifically for application in Pan European digital 1.0 watt DCS1800/PCS1900 handheld radios, the MRFIC1817 is specified for 32 dBm output power with power gain over 27 dB from a 3.6 volt supply. To achieve this superior performance, Motorola's planar GaAs MESFET process is employed. The device is packaged in the PFP-16 Power Flat Package which gives excellent thermal and electrical performance through a solderable backside contact while allowing the convenience and cost benefits of reflow soldering. * Minimum Output Power Capabilities 32 dBm @ 3.6 Volts 30 dBm @ 3.0 Volts * Typical Volt Characteristics RF Input Power = 5.0 dBm RF Output Power = 33.5 dBm Typical PAE = 42% * Low Current required from Negative Supply - 2 mA max * Guaranteed Stability and Ruggedness * Order MRFIC1817R2 for Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. * Device Marking = M1817 ABSOLUTE MAXIMUM RATINGS (TA = 25C, ZO = 50 , unless otherwise noted)
Rating DC Positive Supply Voltage DC Negative Supply Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Symbol VD1, 2, 3 VSS Pin Pout TC Tstg RJC
MRFIC1817
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
CASE 978-02 (PFP-16)
Value 6 -5 10 35 - 35 to +85 -55 to +150 10
Unit Vdc Vdc dBm dBm C C C/W
GND
9
8 7 6 5 4 3 2 1
VG VD3 RF OUT RF OUT RF OUT RF OUT N/C GND
VD2 10 VD2 11 VD1 12 N/C 13 GND 14 RF IN 15 N/C 16
Pin Connections and Functional Block Diagram
MOTOROLA RF (c) Motorola, Inc. 1997 DEVICE DATA
MRFIC1817 1
RECOMMENDED OPERATING RANGES
Parameter Supply Voltage Gate Voltage RF Frequency Range RF Input Power Symbol VD1, 2, 3 VSS fRF PRF Value 2.7 to 5 -3.5 to -4.5 1700 to 1900 0 to 6 Unit Vdc Vdc MHz dBm
ELECTRICAL CHARACTERISTICS (VD1, 2, 3 = 3.6 V, VSS = -4 V, Pin = 5 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms Period, TA = 25C unless otherwise noted. Measured in Reference Circuit Shown in Figure 1)
Characteristic Frequency Range Output Power Power Added Efficiency Output Power (PCS 1900 Tuning f = 1850 to 1910 MHz) Power Added Efficiency (PCS 1900 Tuning f = 1850 to 1910 MHz) Input VSWR Harmonic Output (2nd and 3rd) Output Power at Low voltage (VD1, VD2, VD3 = 3.0 V) Output Power Isolation (VD1, VD2, VD3 = 0 V) Noise Power (In 100 kHz, 1805 to 1880 MHz) Stability - Spurious Output (Pin = 5 dBm, Pout = 0 to 33 dBm, Load VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle) (1) Load Mismatch stress (Pout = 33 dBm, Load VSWR = 10:1 at any Phase Angle) (1) 3 dB VDD Bandwidth Negative Supply Current (1) Adjust VD1, 2, 3 (0 to 3.6 V) for specified Pout; Duty Cycle = 12.5%, Period = 4.6 ms. VD1 VD2 VD3 VSS R1 Min 1710 32 35 -- -- -- -- 30 -- -- -- Typ -- 33.5 42 33.5 42 2:1 -35 32 -40 - 85 -- Max 1785 -- -- -- -- -- -30 -- -30 -80 -60 Unit MHz dBm % dBm % VSWR dBc dBm dBm dBm dBc
No Degradation in Output Power after Returning to Standard Conditions -- -- 2 0.7 -- 2 MHz mA
R2
T4 C9 C8 T3 NC C7 C6 L2 RF IN NC C1 1 nF C2, C6, C8 22 pF, NPO/COG C3, C7, C9 47 nF C4 5.6 pF, AVX0603 ACCUF C5 3.9 pF, AVX0603 ACCUF C10, C11 1 pf T2
9 10 11 12 13 14 15 16
8
L1
7
C1 C2 T1 C3 T5 RF OUT
C11
6 5 4 3 2 1
C4
NC
C5
C10
L1 L2 R1 R2 T1
18 nH, Coilcraft or 20 mm 50 Microstrip Line 1.8 nH, Toko 2012 2.7 KW 2.2 K 2.5 mm 50 Microstrip Line
T2 6 mm 50 Microstrip Line T3 5 mm 40 Microstrip Line T4 1 mm 40 Microstrip Line T5 5.5 mm 50 W Microstrip Line Board Material: Glass/Epoxy, r = 4.45, Thickness = 0.5 mm
NOTE: For PCS 1900 tuning the following values are changed. C5 = 2.7 pF, AVX0603 ACCUF L2 = 1.5 nH, Toko 2012 T3 = 1 mm 50 Microstrip Line
Figure 1. Reference Circuit Configuration MRFIC1817 2 MOTOROLA RF DEVICE DATA
Vreg 3.0 V 0V 0V C15
1 2 3 14
VBAT
5 6
D D D
G S S
4 3 2 1
VRAMP STANDBY R3 C18 C19
13
3.0 V
7
8D
Q1 R5
C16
12 11 10 9 8
C14 CR1
4 5 6
C17 R1 R2
C13
7
C11 T4
9 10
VG TUNE
8
U2 R4 C12 C10 C9 NC L2 RF IN NC T2 T3
L1
7 6 5 4 3 2 1 11 12 13 14 15 16
C1 C2 C3 T5 RF OUT C5 C20
C21 T1 C4 NC
IN
U1 C1 6.8 nF C2, C9, C10 22 pF, 0603 NPO/COG C3, C11 47 nF C4 5.6 pF, AVX0603 ACCUF C5 3.9 pF, AVX0603 ACCUF C12 220 nF C13, C16, C17, C19 1 F C14, C15 1 F C18 1 F C20, C21 1 pF CR1 MMBD701LT1 L1 18 nH, Coilcraft or 20 mm 50 Microstrip Line L2 1.8 nH, Toko 2012 Q1 MMSF4N01HD R1 2.7 KW R2 3 K R3 22 R4 100 R5 470 T1 0.5 mm 30 Microstrip Line T2 5 mm 50 Microstrip Line T3 8 mm 50 Microstrip Line T4 1 mm 50 Microstrip Line T5 5.5 mm 50 W Microstrip Line U1 MRFIC1817 U2 MC33169 (-4 V Version) Board Material: Glass/Epoxy, r = 4.45, Thickness = 0.5 mm
NOTE: For PCS1900 applications, the following component values are changed L2 = 1.5 nH Toko 2012 C4 = 6.8 pF, AVX0603 ACCUF C5 = 2.7 pF, AVX0603 ACCUF C20 = Not Used T1 = 0.5 mm 50 W Microstrip Line T2 = 5 mm 50 W Microstrip Line T3 = 1 mm 40 W Microstrip Line
Figure 2. DCS1800/PCS1900 Applications Circuit Configuration
MOTOROLA RF DEVICE DATA
MRFIC1817 3
Typical Characteristics
33 32.5 32 31.5 31 30.5 30 1.7 Pin = 5 dBm VD1, VD2, VD3 = 3 V VSS = -4 V 1.72 1.74 1.76 f, FREQUENCY (GHz) 1.78 1.8 TA = -35C 25C 85C PAE, POWER ADDED EFFICIENCY (%) 48 TA = -35C 46 44 42 40 38 36 1.7 Pin = 5 dBm VD1, VD2, VD3 = 3.6 V VSS = -4 V 1.72 1.74 1.76 f, FREQUENCY (GHz) 1.78 1.8 25C
Pout , OUTPUT POWER (dBm)
85C
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency versus Frequency
35 PAE, POWER ADDED EFFICIENCY (%) 34.5 34 33.5 33 32.5 32 1.7 Pin = 5 dBm VD1, VD2, VD3 = 3.6 V VSS = -4 V 1.72 1.74 1.76 f, FREQUENCY (GHz) 1.78 1.8 TA = -35C 25C 85C
46 45 44 43 42 41 40 39 1.7 1.72 1.74 1.76 f, FREQUENCY (GHz) Pin = 5 dBm TA = 25C VSS = -4 V 1.78 1.8 VD1, VD2, VD3 = 4.2 V 3.6 V 3V
Pout , OUTPUT POWER (dBm)
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency versus Frequency
36 35.5 35 34.5 34 33.5 33 1.7 Pin = 5 dBm VD1, VD2, VD3 = 4.2 V VSS = -4 V 1.72 1.74 1.76 f, FREQUENCY (GHz) 1.78 1.8
40 30 TA = -35C
Pout , OUTPUT POWER (dBm)
TA = -35C 25C 85C
Pout , OUTPUT POWER (dBm)
20 10 0 -10 -20 -30 -40 -50 -60 0 1 2 3 4 VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS) 5 f = 1.75 GHz Pin = 5 dBm VSS = -4 V 25C AND 85C
Figure 7. Output Power versus Frequency
Figure 8. Output Power versus Drain Voltage
MRFIC1817 4
MOTOROLA RF DEVICE DATA
Typical Characteristics
60 PAE, POWER ADDED EFFICIENCY (%) 50 TA = -35C 40 30 25C 20 10 0 0 2 1 3 4 VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS) 5 85C 35 33 Pout , OUTPUT POWER (dBm) 31 29 27 25 23 21 19 17 15 -20 -15 f = 1.75 GHz VD1, VD2, VD3 = 3.6 V VSS = -4 V -10 -5 0 Pin, INPUT POWER (dBm) 5 10 85C 25C TA = -35C
f = 1.75 GHz Pin = 5 dBm VSS = -4 V
Figure 9. Power Added Efficiency versus Drain Voltage
Figure 10. Output Power versus Input Power
50 PAE, POWER ADDED EFFICIENCY (%) 45 40 35 30 25 20 15 10 5 0 -20 -15 85C f = 1.75 GHz VD1, VD2, VD3 = 3.6 V VSS = -4 V 5 10 25C TA = -35C H2 , SECOND HARMONIC (dBc)
-20 -25 -30 -35 -40 -45 -50 85C -55 -60 25C 0 1 3 2 4 VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS) 5 TA = -35C f = 1.75 GHz Pin = 5 dBm VSS = -4 V
-10 -5 0 Pin, INPUT POWER (dBm)
Figure 11. Power Added Efficiency versus Input Power
Figure 12. Second Harmonic versus Drain Voltage
0 -5 H3 , THIRD HARMONIC (dBc) -10 -15 -20 -25 -30 -35 -40 0 2 4 1 3 VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS) 5 25C TA = -35C 85C f = 1.75 GHz Pin = 5 dBm VSS = -4 V
35 34.5 Pout , OUTPUT POWER (dBm) 34 33.5 33 32.5 32 31.5 31 1.85 1.86 Pin = 5 dBm VD1, VD2, VD3 = 3.6 V VSS = -4 V 1.88 1.89 1.87 f, FREQUENCY (GHz) 1.9 1.91 TA = -35C 25C 85C
Figure 13. Third Harmonic versus Drain Voltage
Figure 14. Output Power versus Frequency - PCS Band
MOTOROLA RF DEVICE DATA
MRFIC1817 5
Typical Characteristics
48 PAE, POWER ADDED EFFICIENCY (%) 46 TA = -35C 44 42 40 38 36 34 32 1.85 1.86 Pin = 5 dBm VD1, VD2, VD3 = 3.6 V VSS = -4 V 1.87 1.88 1.89 f, FREQUENCY (GHz) 1.9 1.91 25C 85C
Figure 15. Power Added Efficiency versus Frequency - PCS Band
Table 1. Optimum Loads Derived from Circuit Characterization
Zin OHMS R 7.77 7.84 7.87 8.07 8.24 8.39 8.44 8.52 8.57 jX -34.15 -34.37 -34.67 -34.79 -35.05 -35.22 -35.56 -35.79 -35.82 R 4.89 4.87 4.86 4.78 4.77 4.73 4.70 4.67 4.65 ZOL* OHMS jX 9.50 9.34 9.18 8.94 8.70 8.51 8.32 8.12 7.95
Table 2. Optimum Loads Derived from Circuit Characterization - PCS Band
Zin OHMS R 3.97 3.94 4.09 4.04 4.18 4.27 4.26 jX -39.68 -40.31 -40.65 -40.92 -41.21 -41.48 -41.71 R 7.49 7.42 7.38 7.31 7.28 7.28 7.23 ZOL* OHMS jX 3.07 2.81 2.51 2.28 2.02 1.73 1.56
f MHz 1710 1720 1730 1740 1750 1760 1770 1780 1785
f MHz 1850 1860 1870 1880 1890 1900 1910
Zin represents the input impedance of the device. ZOL* represents the conjugate of the optimum output load to present to the device.
Zin represents the input impedance of the device. ZOL* represents the conjugate of the optimum output load to present to the device.
MRFIC1817 6
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
Design Philosophy The MRFIC1817 is a 3-stage integrated power amplifier designed for use in cellular phones, especially for those used in DCS1800 (PCN) 3.6 V operation. With matching circuit modifications, it is also applicable for use in DCS1900 (PCS) equipment. Due to the fact that the input, output and some of the interstage matching is accomplished off-chip, the device can be tuned to operate anywhere within the 1500 to 2000 MHz frequency range. Typical performance at different battery voltages is: * 33.5 dBm @ 3.6 V * 32.0 dBm @ 3 V This capability makes the MRFIC1817 suitable for portable cellular applications such as: * 3 V and 3.6 V DCS1800 Class I and II * 3 V and 3.6 V PCS tag5 RF Circuit Considerations The MRFIC1817 can be tuned by changing the values and/or positions of the appropriate external components. Refer to Figure 2, a typical DCS1800 Class I applications circuit. The input match is a shunt-L, series-C, high-pass structure and can be retuned as desired with the only limitation being the on-chip 6 pF blocking capacitor. For saturated applications such as DCS1800 and PCS1900, the input match should be optimized at the rated RF input power. Interstage matching can be optimized by changing the value and/or position of the decoupling capacitor on the VD1 and VD2 supply lines. Moving the capacitor closer to the device or reducing the value increases the frequency of resonance with the inductance of the device's wirebonds and leadframe pin. Output matching is accomplished with a low-pass network as a compromise between bandwidth and harmonic rejection. Implementation is through high Q capacitors mounted along a 50 W microstrip transmission line. Values and positions are chosen to present a 2 W loadline to the device while conjugating the device output parasitics. The network must also properly terminate the second and third harmonics to optimize efficiency and reduce harmonic output. All components used in this application are low-Q commercial chip capacitors, except for the output load line. Loss in circuit traces must also be considered. The output transmission line and the bias supply lines should be at least 0.6 mm in width to accommodate the peak circulating currents which can be as high as 2 amperes under worst case conditions. The bias supply line which supplies the output should include an RF choke of at least 18 nH, surface mount solenoid inductors or quarter wave microstrip lines. Discrete inductors will usually give better efficiency and conserve board space. Biasing Considerations Gate bias lines are tied together and connected to the VSS voltage, allowing gate biasing through use of external resistors or positive voltages. This allows setting the quiescent current of all stage in the same time while saving some board space. For applications where the amplifier is operated close to saturation, such as with TDMA amplifiers, the gate bias can be set with resistors. Variations in process and tempera-ture will not affect amplifier performance significantly in these applications. The values shown in the Figure 1 will set quiescent currents of 20 to 40 mA for the first stage, 150 to 300 mA for the second stage, and 400 to 800 mA for the final stage. For linear modes of operation which are required for CDMA amplifiers, the quiescent current must be more carefully controlled. For these applications, the VG pins can be referenced to some tunable voltage which is set at the time of radio manufacturing. Less than 1 mA is required in the divider network so a DAC can be used as the voltage source. Power Control Using the MC33169 The MC33169 is a dedicated GaAs power amplifier support IC which provides the -4 V required for V SS, an N-MOS drain switch interface and driver and power supply sequencing. The MC33169 can be used for power control in applications where the amplifier is operated in saturation since the output power in non-linear operation is proportional to VD2. This provides a very linear and repeatable power control transfer function. This technique can be used open loop to achieve 40-45 dB dynamic range over process and temperature variation. With careful design and selection of calibration points, this technique can be used for DCS1800 control where 30 dB dynamic range is required, eliminating the need for the complexity and cost of closed-loop control. The transmit waveform ramping function required for systems such as DCS1800 can be implemented with a simple Sallen and Key filter on the MC33169 control loop. The amplifier is then ramped on as the VRAMP pin is taken from 0 V to 3 V. To implement the different power steps required for DCS1800, the VRAMP pin is ramped between 0 V and the appropriate voltage between 0 V and 3 V for the desired output power. For closed-loop configurations using the MC33169, MMSF4N01HD N-MOS switch and the MRFIC1817 provide a typical 1 MHz 3 dB loop bandwidth. The STANDBY pin must be enabled (3 V) at least 800 s before the VRAMP pin goes high and disabled (0 V) at least 20 ms before the VRAMP pin goes low. This STANDBY function allows for the enabling of the MC33169 one burst before the active burst thus reducing power consumption. Conclusion The MRFIC1817 offers the flexibility in matching circuitry and gate biasing required for portable cellular applications. Together with the MC33169 support IC, the device offers an efficient system solution for TDMA applications such as DCS1800 where saturated amplifier operation is used. For more information about the power control using the MC33169, refer to application note AN1599, "Power Control with the MRFIC0913 GaAs Integrated Power Amplifier and MC33169 Support IC." Evaluation Boards Two versions of the MRFIC1817 evaluation board are available. Order MRFIC1817DCSTF for the 1.8 GHz version and order MRFIC1817PCSTF for the 1.9 GHz version. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office.
MOTOROLA RF DEVICE DATA
MRFIC1817 7
PACKAGE DIMENSIONS
h X 45 _
A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.350 0.025 0.152 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
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CASE 978-02 ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
MRFIC1817 8
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MRFIC1817/D MOTOROLA RF DEVICE DATA

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